Tapered electrode for stacked capacitors

A method for forming a stacked capacitor includes the steps of providing a first insulating layer having a conductive access path therethrough, forming a second insulating layer on the first insulating layer, forming a trench in the second insulating layer, the trench having tapered sidewalls, forming a first electrode in the trench and on the trench sidewalls, the first electrode being electrically coupled to the conductive access path, forming a dielectric layer on the first electrode and forming a second electrode on the dielectric layer. A stacked capacitor having increased surface area includes a first electrode formed in a trench provided in a dielectric material. The first electrode has tapered surfaces forming a conically shaped portion of the first electrode, the first electrode for accessing a capacitively coupled storage node.

What is claimed is:

1. A method for forming a stacked capacitor comprising the steps of:

providing a first insulating layer having a conductive access path therethrough;

forming a second insulating layer on the first insulating layer;

forming a trench in the second insulating layer;

depositing a resist material in the trench;

recessing the resist material to a predetermined depth within the trench;

anisotropically etching the trench sidewalls to form tapered surfaces to form tapered sidewalls of the trench;

forming a first electrode in the trench and on the tapered sidewalls, the first electrode being electrically coupled to the conductive access path;

forming a dielectric layer on the first electrode; and

forming a second electrode on the dielectric layer.

2. The method as recited in claim 1, wherein the step of forming a trench in the second insulating layer, the trench having tapered sidewalls includes the step of forming the trench by reactive ion etching.

3. The method as recited in claim 1, wherein the tapered sidewalls form a conical shaped portion in the trench.

4. The method as recited in claim 1, wherein the step of forming a first electrode in the trench and on the trench sidewalls includes the step of depositing a metal layer in the trench which covers the sidewalls.

5. The method as recited in claim 1, further comprises the step of adjusting a taper angle of the sidewalls.

6. The method as recited in claim 1, wherein the step of forming a dielectric layer on the first electrode includes the step of forming a layer of barium strontium titanium oxide.

7. The method as recited in claim 1, wherein the first electrode includes platinum.

8. The method as recited in claim 1, wherein the first electrode includes one of Iridium, Ruthenium and Ruthenium oxide.

9. A method of fabricating a stacked capacitor for a semiconductor device comprising the steps of:

providing a first insulating layer having a conductive plug formed therethrough, the conductive plug for connecting to an access transistor of the semiconductor device;

forming a second insulating layer on the first insulating layer;

etching a trench in the second insulating layer to gain access to the conductive plug;

tapering sidewalls of the trench to form tapered surfaces within the trench depositing a resist material in the trench:

recessing the resist material to a predetermined depth within the trench; and

anisotropically etching trench sidewalls to form the tapered surfaces;

forming a first electrode in the trench and on the tapered surfaces, the first electrode being electrically coupled to the conductive plug;

forming a dielectric layer on the first electrode; and

forming a second electrode on the dielectric layer.

10. The method as recited in claim 9, wherein the semiconductor device is a memory chip.

11. The method as recited in claim 9, wherein the step of etching a trench in the second insulating layer to gain access to the conductive plug includes the step of reactive ion etching the trench.

12. The method as recited in claim 9, wherein the tapered surfaces form a conical shaped portion in the trench.

13. The method as recited in claim 9, wherein the step of tapering sidewalls of the trench to form tapered surfaces within the trench includes an anisotropic etch process.

14. The method as recited in claim 9, further comprises the step of adjusting a taper angle of the tapered surfaces.

15. The method as recited in claim 9, wherein the step of forming a dielectric layer on the first electrode includes the step of forming a layer of barium strontium titanium oxide.

16. The method as recited in claim 9, wherein the first electrode includes platinum.

17. The method as recited in claim 9, wherein the first electrode includes one of Iridium, Ruthenium and Ruthenium oxide.