Method for producing resist structures

A method for creating negative resist structures is described. In the method, a chemically fortified resist is applied to a substrate, dried, irradiated with light, x-ray, electron or ion beams, heated, developed using a aqueous-alkaline developer solution and siliconized from a liquid phase. The resist contains the following constituent: a polymer, whose polarity is modified by acidic action and which contains carboxylic acid anhydride groups, preferably in latent form; a compound which releases an acid as a result of thermal treatment; a photoreactive compound, from which a base is created during the irradiation with light, x-ray, electron or ion beams; a solvent; and optionally one or more additives.

We claim:

1. A process for producing negative resist structures, which comprises the steps of:

providing a substrate;

applying a chemical amplification resist to the substrate, the chemical amplification resist containing:

a polymer which changes polarity when exposed to an acid, and the polymer including carboxylic anhydride groups;

a compound functioning as a thermoacid generator from which an acid is released when exposed to a thermal treatment;

a photoreactive compound functioning as a photobase generator from which a base is formed upon exposure to one of light, X-rays, electron beams and ion beams; and

a solvent;

drying the chemical amplification resist;

exposing the chemical amplification resist to one of light, X-rays, electron beams and ion beams;

heating the chemical amplification resist;

developing the chemical amplification resist with an aqueous-alkaline developer solution; and

siliconizing the chemical amplification resist from a liquid phase.

2. The process according to claim 1, which comprises forming the polymer with at least one acid-labile group selected from the group consisting of tert-alkyl esters, tert-butoxycarbonyloxy, acetal, tetrahydrofuranyl, and tetrahydropyranyl.

3. The process according to claim 1, which comprises liberating a sulfonic acid from the thermo acid generator.

4. The process according to claim 1, which comprises forming the thermoacid generator from at least one compound selected from the group consisting of a dialkyliodonium salt, a alkylaryliodonium salt, a diaryliodonium salt, a trialkylsulfonium salt of a sulfonate, a dialkylarylsulfonium salt of a sulfonate, a alkyldiarylsulfonium salt of a sulfonate, o-nitrobenzylsulfonate, a salt of a benzylthiolanium compound, a salt of a polyfluorinated butanesulfonate, and N-sulfonic esters.

5. The process according to claim 1, which comprises forming an amine from the photobase generator.

6. The process according to claim 1, which comprises forming the photobase generator from at least one compound selected from the group consisting of O-acyloxime, a benzyloxycarbonylamide derivative, a formamide derivative, a diarylmethanetrialkylammonium salt, o-nitrobenzyloxycarbonylcyclohexylamine, 2,6-dinitrobenzyloxycarbonylcyclohexylamine, a nifedipine derivative, and polymer-bound photobase generators based on one of the aforementioned base precursors.

7. The process according to claim 1, which comprises adding an additive to the chemical amplification resist and selecting the additive from the group consisting of 9-anthracenemethanol acid and 9-hydroxy-9-fluorenecarboxylic acid.

8. The process according to claim 1, which comprises irradiating the chemical amplification resist with UV light having a wavelength in a range of 1 to 400 nm.

9. The process according to claim 1, which comprises performing the siliconizing step using a compound containing amino groups.

10. The process according to claim 1, which comprises carrying out a thermal treatment before performing the siliconizing step.

11. The process according to claim 1, which comprises performing the siliconizing step using a compound containing amino groups in an organic solvent.

12. The process according to claim 1, which comprises carrying out a thermal treatment after performing the siliconizing step.

13. The process according to claim 1, which comprises carrying out a thermal treatment before and after performing the siliconizing step.

14. The process according to claim 1, which comprises forming the chemical amplification resist with at least one additive.

15. The process according to claim 1, which comprises providing the carboxylic anhydride groups in latent form.