Press-contact type semiconductor device

A press-contact type semiconductor device comprises: a plurality of semiconductor elements each of which has a first main electrode and a control electrode and a second main electrode; a second common main power source plate having the semiconductor elements positioned on a front surface thereof and electrically connected to the second main electrodes; a first common main power source plate arranged on the front surfaces of the semiconductor elements and electrically connected to the first main electrodes; a common control signal/main current plate arranged between semiconductor elements and including at least control signal wiring layers and main current wiring layers; conductive connectors for electrically connecting at least the main current wiring layers and the first common maim power source plate; and conductive elastic members for electrically connecting the main current wiring layers or the first common main power source plate to the conductive connectors by elasticity.

What is claimed is:

1. A press-contact type semiconductor device comprising:

a plurality of semiconductor elements each of which has a first main electrode and a control electrode on a front surface thereof and a second main electrode on a rear surface thereof;

a second common main power source plate having said semiconductor elements positioned on a front surface thereof and electrically connected to said second main electrodes of said semiconductor elements;

a first common main power source plate arranged on said front surfaces of said semiconductor elements and electrically connected to said first main electrodes of said semiconductor elements;

a common control signal/main current plate arranged between semiconductor elements and comprising at least control signal wiring layers electrically connected to said control electrodes and main current wiring layers electrically connected to said first main electrodes;

conductive connectors for electrically connecting at least said main current wiring layers and said first common main power source plate; and

conductive elastic members configured to connect electrically said main current wiring layers or said first common main power source plate to said conductive connectors by elasticity.

2. The press-contact type semiconductor device of claim 1, wherein said common control signal/main current plate is constituted by a wiring substrate in which at least said control signal wiring layers and said main current wiring layers are laid one over after another via insulating layers.

3. The press-contact type semiconductor device of claim 2, wherein both of said control wiring layers and said main current wiring layers of said common control signal/main current plate are multiple-layered.

4. The press-contact type semiconductor device of claim 3, wherein a plurality of said multiple-layered control wiring layers and a plurality of said multiple-layered main current wiring layers of said common control signal/main current plate are alternately laid over one after another, and said main current wiring layers are positioned opposite to said control signal wiring layers.

5. The press-contact type semiconductor device of claim 1, wherein said common control signal/main current plate further comprises a resistance element which is integral to either said control signal wiring layers or said main current wiring layers.

6. The press-contact type semiconductor device of claim 1, wherein said common control signal/main current plate is in the shape of a mesh and has an electrode openings configured to connect said first common main power supply plate and said semiconductor elements.

7. The press-contact type semiconductor device of claim 2, wherein said conductive connectors and said conductive elastic members comprise a multiple contact structure.

8. The press-contact type semiconductor device of claim 2, wherein said conductive connectors are attached to said common control signal/main current plate using a bonding metal.

9. The press-contact type semiconductor device of claim 2, wherein each of said conductive connector is a screw configured to attach said common control signal/main current plate to said first common main power source plate, and each of said conductive elastic members is a washer interposed between said conductive connector and said common control signal/main current plate.

10. The press-contact type semiconductor device of claim 2, wherein each of said conductive connector is a screw configured to attach said common control signal/main current plate to said first common main power source plate, and each of said conductive elastic members is a coned disc spring interposed between said conductive connector and said common control signal/main current plate.

11. The press-contact type semiconductor device of claim 9 further comprising second conductive elastic members which are interposed between said common control signal/main current plate and said first common main power source plate, and electrically connect said main current wiring layers and said first common main power source plate by elasticity.

12. The press-contact type semiconductor device of claim 9, wherein said first main power source plate comprises projection connectors electrically connected to said main current wiring layers.

13. The press-contact type semiconductor device of claim 2, wherein each of said conductive connectors is in the shape of a rod, is provided on said common control signal/main current plate and attaches said common control signal/main current plate to said first common main power source plate, and each of said conductive elastic member is a banana plug interposed between said conductive connector and said first common main power source plate.

14. The press-contact type semiconductor device of claim 13, wherein each of said conductive rod connectors is a T-shaped or I-shaped pin.

15. The press-contact type semiconductor device of claim 2, wherein each of said conductive connectors is in the shape of a rod, is provided on said common control signal/main current plate and attaches said common control signal/main current plate to said first common main power source plate, and each of said conductive elastic members is a sheet spring interposed between said conductive connector and said first common main power source plate.

16. The press-contact type semiconductor device of claim 15, wherein each of said conductive rod connectors is a T-shaped or I-shaped pin.

17. The press-contact type semiconductor device of claim 1 further comprising control electrode probes configured to connect electrically said control signal wiring layers of the common control signal/main current plate to said control electrodes of said semiconductor element.

18. The press-contact type semiconductor device of claim 17, wherein each of said control electrode probes comprises: a cylinder; a substrate contacting part on a bottom of said cylinder; a elastic member positioned in said cylinder; a piston movable in said cylinder; and an element contacting part at an upper part of said piston.

19. The press-contact type semiconductor device of claim 18, wherein said substrate contacting part and said element contacting part of said control electrode probes are semi-spherical.

20. The press-contact type semiconductor device of claim 18, wherein said substrate contacting parts of said control electrode probes are electrically contacted to said control signal wiring layers of said common control signal/main current plate, and said element contact parts of said control electrode probes are electrically contacted to said control electrodes of said semiconductor elements.