Monolithically integrated opto-electronic semiconductor component

A monolithically integrated opto-electronic semiconductor component characterized by a semiconductor substrate having a first surface and a second surface extending parallel to each other, a strip waveguide being applied to the first surface to conduct radiation, such as light, in a path parallel to the first surface, a coupling element for coupling radiation from the strip waveguide through the substrate to a region on the second surface, a photodetector being applied to the second surface at the region for receiving the light which has been coupled laterally from the strip waveguide through the substrate. Preferably, the coupling means comprises a V-shaped groove having slanting surfavces forming a mirror which reflects the light substantially at right angles to the path in the strip waveguide.

I claim:

1. A monolithically integrated opto-electronic semiconductor component having at least one photodetector optically coupled to at least one light waveguide, said component comprising a semiconductor substrate having a light waveguide in the form of a strip waveguide extending along one surface and a photodetector applied on an opposite surface of the substrate, and a coupling element being provided on said substrate, said coupling element coupling radiation laterally out of said strip waveguide and directing said radiation through the substrate onto said photodetector at said opposite surface.

2. A monolithically integrated opto-electronic semiconductor component according to claim 1, wherein the coupling element is composed of a path-folding mirror surface arranged at an angle to the strip waveguide to direct radiation at an angle to the path of the radiation in the strip waveguide onto the photodetector.

3. A monolithically integrated opto-electronic semiconductor component according to claim 2, wherein the path-folding mirror is a slanting side wall of a V-shaped groove extending across said waveguide.

4. A monolithically integrated opto-electronic semiconductor component according to claim 1, wherein the photodetector is selected from a group consisting of photodiodes, phototransistors and photoconductors.

5. A monolithically integrated opto-electronic semiconductor component according to claim 1, wherein the coupling element comprises a V-shaped groove extending through the strip waveguide, said V-shaped groove having a slanting side wall for directing light from the waveguide through the semiconductor substrate onto the photodetector.

6. A monolithically integrated opto-electronic semiconductor component according to claim 1, wherein said light waveguide contains at least one additional optical element.

7. A monolithically integrated opto-electronic semiconductor component according to claim 6, wherein said additional optical element is composed of a diffraction grating.

8. A monolithically integrated opto-electronic semiconductor component having at least one photodetector optically coupled to at least one light waveguide, said component comprising a semiconductor substrate having a first surface and a second surface extending parallel to each other, a strip waveguide being applied to the first surface to conduct light in a path parallel to said first surface, a photodiode applied on the second surface, and a coupling element for coupling radiation from the strip waveguide to the photodiode, said coupling element being a V-shaped groove extending across said strip waveguide and into said first surface, said V-shaped groove reflecting radiation at an angle to said path and through the substrate onto the photodetector on the second surface.

9. A monolithically integrated opto-electronic semiconductor component according to claim 8, wherein said V-shaped groove has slanting walls forming a path folding mirror surface.