Koo, Tuh-Kai; VAN Velthoven, Armand J.;

Microelectronic circuit coating system

A coating system applies silicon dioxide to microelectronic dies mounted on electrical conductor systems such as lead frames, circuit boards and to connecting wires in a single operation while preventing the deposition of silicon dioxide on the outer portions of leads which are formed as part of its lead frame.

• Heelholder for safety ski bindings Anti-erosion coating of seeds
• Fiber optic connector module Surgical clip
• Segmented dynamic splint Optical radiation sensor device
• Linear actuator Inbred maize line PH1TB
• Multi-piece punch down blade assembly Acceleration sensor
• Manipulator drive with slip-eliminating adjustment Crate for pallets
• Heat exchanger of air conditioner Ion-sensitive compounds
• Treatment of agricultural waste Grapefruit knife
• Contact lens Isothiazolone aqueous solutions
• Pyridazion quinoline compounds Pelletizer
• Embankment stabilizing brick Automatic tool change machine tool
• Light-emitting devices X-Ray tube bias supply
• Selenium rectifier Percussion instrument
• Infrared detector Parenteral micelle solutions
• Golf-theme writing related articles Saw assembly and lubrication system
• Harness for electromagnetic transducer Surface acoustic wave device
• Football gridle Vector network analyzer
• Gas treatment process Dual carrying pouch
• Network connected device protection Molding element for motorcar bodies
• Herbicidal mixtures Concentration sensing by viscosity measurement
• Method of making semiconductor laser Solar panel
• Treatment of osteoarthritis Downhole drilling motor
• Immersible liquid densitometer Derivatives of cyclopropane
• High resolution quantizer Monolithically integrated opto-electronic semiconductor component
• Edger Slide member
• Communication system Thermoplastic resin composition
• Store for individual products Process for solution mining
• Hybrid airflow measurement Moving table flap
• Polymer membranes for separation process Integrated circuit test system
• Dental X-ray diagnostic installation Portable sail structures
• Tooth rest for cutter grinder Stabilization of magnesium hydroxide slurries
• Diving tow board Power transmission

We claim:

1. A microelectronic circuit coating system for depositing silicon dioxide on a die secured to an electrical conductor system with bonding wires connecting bonding pads on the die to leads on the electrical conductor system, comprising:

means for supporting an electrical conductor system having a die with wires extending from said die to leads on the electrical conductor system, said die and extending wires defining a first predetermined area,

means for directing a chemical deposition mixture onto said die and electrical conductor system,

means for heating said supporting means and electrical conductor system to an elevated temperature, and

masking means positioned over said electrical conductor system and having an aperture corresponding to said first predetermined area and aligned therewith, whereby said masking means permits said deposition mixture to be deposited solely within said first predetermined area and prevents said deposition mixture from forming on said electrical conductor system in a second predetermined area outside said first predetermined area.

2. A microelectronic circuit coating system in accordance with claim 1, wherein said masking means comprises a moveable template having an aperture corresponding to said first predetermined area.

3. A microelectronic circuit coating system in accordance with claim 1, wherein said masking device comprises an outer tube having an end section forming an aperture that corresponds to said first predetermined area, said supporting means and said tube being moveable relative to each other.

4. A microelectronic circuit coating system in accordance with claim 3, wherein said mixture directing means comprises an inner tube mounted inside and spaced from said outer tube to form a passage between the tubes and having an end terminating short of said outer tube aperture whereby said chemical deposition mixture is directed through said inner tube onto said first predetermined area and exhaust gases are removed from said first predetermined area through said passage.

5. In combination with the microelectronic circuit system specified in claim 4, a cooling coil secured around said outer tube.

6. A microelectronic circuit coating system in accordance with claim 1, wherein said electrical conductor system is a lead frame.

7. A microelectronic circuit coating system in accordance with claim 1, wherein said system is a circuit board having wires printed thereon.

8. A microelectronic circuit coating system in accordance with claim 1, wherein said elevated temperature is at least 350.degree. C.

9. A microelectronic circuit coating system in accordance with claim 1, wherein said chemical deposition mixture is composed of oxygen, silane, and a carrier gas.

10. A microelectronic circuit coating system in accordance with claim 9, wherein said heating means heats said electrical conductor system to at least 350.degree. C.

11. A microelectronic circuit coating system for simultaneously depositing silicon dioxide on a plurality of discrete dies, each die secured to an electrical conductor system with bonding wires connecting bonding pads on a die to corresponding leads on the electrical conductor system, comprising:

means for supporting the plurality of electrical conductor system-secured dies, said dies having wires extending from each said die to corresponding leads on the electrical conductor system, each said die and associated extending wires defining a first predetermined area of unconnected segments,

means for directing a chemical deposition mixture onto said plurality of electrical conductor system-secured dies,

means for heating said supporting means and said electrical conductor system to an elevated temperature,

masking means positioned over said electrical conductor system and having an aperture corresponding to said first predetermined area associated with each said die and aligned therewith, whereby said masking means permits said deposition mixture to be deposited solely within said first predetermined area and prevents said deposition mixture from depositing on a second predetermined area outside said first predetermined area of each said die.

12. A microelectronic circuit coating system in accordance with claim 11, wherein said masking means comprises a moveable template having apertures corresponding to each of said first predetermined areas.

13. A microelectronic circuit coating system in accordance with claim 11, wherein said masking means comprises a multiplicity of moveable outer tubes having end sections forming apertures that correspond to the segments of said first predetermined area.

14. A microelectronic circuit coating system in accordance with claim 13, wherein said mixture directing means comprises an inner tube mounted inside and spaced from each said outer tube to form a passage between the tubes and having an end terminating short of each said outer tube aperture whereby said mixture of oxygen, and a carrier gas is directed through said inner tube onto each segment of said first predetermined area and exhaust gases are removed from each segment of said first predetermined area through said passage.

15. In combination with the microelectronic circuit system specified in claim 14, a cooling coil secured around each said outer tube.

16. A microelectronic circuit coating system in accordance with claim 11, wherein said electrical conductor system is a lead frame.

17. A microelectronic circuit coating system in accordance with claim 11, wherein said system is a circuit board having wires printed thereon.

18. A microelectronic circuit coating system in accordance with claim 11, wherein said elevated temperature is at least 350.degree..

19. A microelectronic circuit coating system in accordance with claim 11, wherein said chemical deposition mixture is composed of oxygen, silane, and a carrier gas.

20. A microelectronic circuit coating system in accordance with claim 19, wherein said heating means heats said electrical conductor system to at least 350.degree. C.